Distributed feedback broad area lasers with multiple epitaxially stacked active regions and tunnel junctions.

Distributed feedback (DFB) broad area (BA) lasers with multiple epitaxially stacked active regions and tunnel junctions designed for emission around 900 nm are investigated. DFB BA lasers with a cavity length of 1 mm and different stripe widths are compared in terms of their electro-optical performance and beam quality. The laser with a 200 µm stripe width achieved a high optical pulse power of 100 W in 10 ns long pulses at an injection current of 63 A, resulting in a brightness of 81 MW/cmsr.

A 1.4 kW 780 nm pulsed diode laser, high duty cycle, passively side-cooled pump module.

A diode laser module emitting 1.4 kW optical in-pulse power near 780 nm optimized for high (≥ 10%) duty-cycle operation in a micro-channel free design is presented. With full collimation, a beam quality with a nearly symmetric M of 205 × 295 (vertical × horizontal direction) for a wide range of pulse widths is found.

High-power sampled-grating-based master oscillator power amplifier system with 23.5 nm wavelength tuning around 970 nm.

Tunable high-power diode lasers are key components in various established and emerging applications. In this work, we present a compact hybrid master oscillator power amplifier (MOPA) laser system. The system utilizes a tunable GaAs-based sampled-grating (SG) distributed Bragg reflector (DBR) laser as the master oscillator (MO), which emits around a wavelength of 970 nm in a single longitudinal mode with a spectral width below 20 pm.

Compact Handheld Probe for Shifted Excitation Raman Difference Spectroscopy with Implemented Dual-Wavelength Diode Laser at 785 Nanometers.

A compact handheld probe for shifted-excitation Raman difference spectroscopy (SERDS) with an implemented dual-wavelength diode laser with an emission at 785 nm is presented. The probe is milled from aluminum and has dimensions 100 × 28 × 12 mm. The diode laser provides two excitation lines with a spectral distance of 10 cm(-1) (0.

Dual-wavelength Y-branch distributed Bragg reflector diode laser at 785 nanometers for shifted excitation Raman difference spectroscopy.

A dual-wavelength Y-branch distributed Bragg reflector (DBR) diode laser at 785 nm is presented as an excitation light source for shifted excitation Raman difference spectroscopy (SERDS). The monolithic device was realized with deeply etched surface DBR gratings using one-step epitaxy. An optical output power of 140 mW was obtained in continuous-wave (CW) operation for each laser cavity, with emission wavelengths of the device at 784.