Improved Surface-Enhanced-Raman Scattering Sensitivity Using Si Nanowires/Silver Nanostructures by a Single Step Metal-Assisted Chemical Etching.

In this study, we developed highly sensitive substrates for Surface-Enhanced-Raman-Scattering (SERS) spectroscopy, consisting of silicon nanowires (SiNWs) decorated by silver nanostructures using single-step Metal Assisted Chemical Etching (MACE). One-step MACE was performed on p-type Si substrates by immersion in AgNO/HF aqueous solutions resulting in the formation of SiNWs decorated by either silver aggregates or dendrites. Specifically, dendrites were formed during SiNWs' growth in the etchant solution, whereas aggregates were grown after the removal of the dendrites from the SiNWs in HNO aqueous solution and subsequent re-immersion of the specimens in a AgNO/HF aqueous solution by adjusting the growth time to achieve the desired density of silver nanostructures.

Study of Si Nanowires Produced by Metal-Assisted Chemical Etching as a Light-Trapping Material in n-type c-Si Solar Cells.

Si nanowires (SiNWs) produced by metal-assisted chemical etching on n-type Si were investigated for their use as a light-trapping material in c-Si solar cells. The nanowires were fabricated before junction formation (on a lightly doped Si substrate) so that their core was bulk and nonporous. The above fabrication process was implemented in solar cell fabrication.

Dielectric properties of porous silicon for use as a substrate for the on-chip integration of millimeter-wave devices in the frequency range 140 to 210 GHz.

Unlabelled: In this work, the dielectric properties of porous Si for its use as a local substrate material for the integration on the Si wafer of millimeter-wave devices were investigated in the frequency range 140 to 210 GHz. Broadband electrical characterization of coplanar waveguide transmission lines (CPW TLines), formed on the porous Si layer, was used in this respect. It was shown that the dielectric parameters of porous Si (dielectric permittivity and loss tangent) in the above frequency range have values similar to those obtained at lower frequencies (1 to 40 GHz).

Thermal conductivity of highly porous Si in the temperature range 4.2 to 20 K.

Unlabelled: We report on experimental results of the thermal conductivity k of highly porous Si in the temperature range 4.2 to 20 K, obtained using the direct current (dc) method combined with thermal finite element simulations. The reported results are the first in the literature for this temperature range.

A thermoelectric generator using porous Si thermal isolation.

In this paper we report on a thermoelectric generator (TEG) using thermal isolation provided by a thick porous Si layer locally formed on the Si wafer and thermocouples composed of p-doped polycrystalline Si/Al. The "hot" contacts of the thermocouples lie on the porous Si layer, while the "cold" contacts lie on bulk crystalline Si. A housing was also designed and fabricated in order to transfer any external temperature change on the "hot" contacts of the thermocouples, the "cold" contacts being isolated from the "hot" contacts by a thick resist layer.