Cleaning and passivation of metal surfaces are necessary steps for selective film deposition processes that are attractive for some microelectronic applications (e.g., fully aligned vias or self-aligned contacts).
View Article and Find Full Text PDFDespite the success of plasma-enhanced atomic layer deposition (PEALD) in depositing quality silicon nitride films, a fundamental understanding of the growth mechanism has been difficult to obtain because of lack of in situ characterization to probe the surface reactions noninvasively and the complexity of reactions induced/enhanced by the plasma. These challenges have hindered the direct observation of intermediate species formed during the reactions. We address this challenge by examining the interaction of Ar plasma using atomically flat, monohydride-terminated Si(111) as a well-defined model surface and focusing on the initial PEALD with aminosilanes.
View Article and Find Full Text PDFA detailed reaction mechanism has been proposed for the full ALD cycle of Si3N4 deposition on the β-Si3N4(0001) surface using bis(diethylamino)silane (BDEAS) or bis(tertiarybutylamino)silane (BTBAS) as a Si precursor with NH3 acting as the nitrogen source. Potential energy landscapes were derived for all elementary steps in the proposed reaction network using a periodic slab surface model in the density functional approximation. Although the dissociative reactivity of BTBAS was slightly better than that of BDEAS, the thermal deposition process was still found to be an inherently high temperature process due to the high activation energies during the dissociative chemisorption of both precursors and the surface re-amination steps.
View Article and Find Full Text PDFWe report the synthesis, characterization, and experimental density function theory-derived properties of new volatile strontium and barium imidazolate complexes, which under atomic layer deposition conditions using ozone as a reagent can deposit crystalline strontium oxide at 375 °C.
View Article and Find Full Text PDFIntraannular ring alternation in heterogeneously substituted cyclotriphosphazenes is investigated using both ab initio and density functional methods. Comparisons of the calculated geometries for N3P3X6 (X = H, F, Cl, Me, Ph) and N3P3X4Y2 (X = F, Cl; Y = Me, Ph, X, Cl) with experimental X-ray data establish the utility of the 6-31G* basis for use with both Hartree-Fock and the B3LYP and B3PW91 functionals. Analysis of orbitals and charges shows that the bonding is best described using a polarized bond model rather than the previous explanation of asymmetric nitrogen-lone-pair donation into the phosphorus-nitrogen bond.
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