Exploring the optimal combination of Ru/Ta bilayer mask stacks and illumination source shapes to mitigate mask 3D effects at high-NA extreme ultraviolet lithography.

The imaging performance of extreme ultraviolet (EUV) lithography is determined by the optical properties and thickness of the photomask absorber material and the illumination source shape. Optimizing the trade-offs between imaging metrics, such as normalized image log slope, telecentricity error, and best focus variation through pitch (collectively known as mask-3-dimensional (M3D) effects), is crucial to improve the throughput of the EUV lithography process. This study aims to optimize Ru/Ta bilayer photomask absorber stacks and illumination source shapes to mitigate M3D effects using mask diffraction analysis.

Improvement of the Ferroelectric Response of La-Doped Hafnium Zirconium Oxide Employing Tungsten Oxide Interfacial Layer with Back-End-of-Line Compatibility.

In this work, the impact of a tungsten oxide (WO) seed and capping layer for ferroelectric La-doped (Hf, Zr)O (La:HZO) based capacitors, designed with back-end-of-line (BEOL) compatibility, is systematically investigated. The WO capping layer supplies oxygen to the La:HZO layer throughout the fabrication process and during device cycling. This facilitates the annihilation of oxygen vacancies (V) within the La:HZO layer, thereby stabilizing its ferroelectric orthorhombic phase and resulting in an increase of the remanent polarization (P) value in the capacitor.

Detection of urinary tract stones on submillisievert abdominopelvic CT imaging with deep-learning image reconstruction algorithm (DLIR).

Purpose: Urolithiasis is a chronic condition that leads to repeated CT scans throughout the patient's life. The goal was to assess the diagnostic performance and image quality of submillisievert abdominopelvic computed tomography (CT) using deep learning-based image reconstruction (DLIR) in urolithiasis.

Methods: 57 patients with suspected urolithiasis underwent both non-contrast low-dose (LD) and ULD abdominopelvic CT.

Chemical Vapor Deposition of a Single-Crystalline MoS Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire Surface.

Recently, a step-flow growth mode has been proposed to break the inherent molybdenum disulfide (MoS) crystal domain bimodality and yield a single-crystalline MoS monolayer on commonly employed sapphire substrates. This work reveals an alternative growth mechanism during the metal-organic chemical vapor deposition (MOCVD) of a single-crystalline MoS monolayer through anisotropic 2D crystal growth. During early growth stages, the epitaxial symmetry and commensurability of sapphire terraces rather than the sapphire step inclination ultimately govern the MoS crystal orientation.

Quantification of area-selective deposition on nanometer-scale patterns using Rutherford backscattering spectrometry.

We present a site-specific elemental analysis of nano-scale patterns whereby the data acquisition is based on Rutherford backscattering spectrometry (RBS). The analysis builds on probing a large ensemble of identical nanostructures. This ensures that a very good limit of detection can be achieved.