Optical and electrical properties of MoO and MoO thin films prepared from the chemically driven isothermal close space vapor transport technique.

Chemically-driven isothermal close space vapour transport was used to prepare pure MoO thin films which were eventually converted to MoO by annealing in air. According to temperature-dependent Raman measurements, the MoO/MoO phase transformation was found to occur in the 225 °C-350 °C range while no other phases were detected during the transition. A clear change in composition as well as noticeable modifications of the band gap and the absorption coefficient confirmed the conversion from MoO to MoO.

Controlling the Epitaxial Growth of BiTe, BiTe, and BiTe Pure Phases by Physical Vapor Transport.

BiTe is a well-studied material because of its thermoelectric properties and, recently, has also been studied as a topological insulator. However, it is only one of several compounds in the Bi-Te system. This work presents a study of the physical vapor transport growth of Bi-Te material focused on determining the growth conditions required to selectively obtain a desired phase of the Bi-Te system, i.

Calcium phosphate/porous silicon biocomposites prepared by cyclic deposition methods: spin coating vs electrochemical activation.

Porous silicon (PSi) provides an excellent platform for bioengineering applications due to its biocompatibility, biodegradability, and bioresorbability. However, to promote its application as bone engineering scaffold, deposition of calcium phosphate (CaP) ceramics in its hydroxyapatite (HAP) phase is in progress. In that sense, this work focuses on the synthesis of CaP/PSi composites by means of two different techniques for CaP deposition on PSi: Cyclic Spin Coating (CSC) and Cyclic Electrochemical Activation (CEA).

Isothermal close space sublimation for II-VI semiconductor filling of porous matrices.

Isothermal close space sublimation, a simple and low-cost physical vapour transport technique, was used to infiltrate ZnTe and CdSe semiconductors in porous silicon. The structure of the embedded materials was determined by X-ray diffraction analysis while Rutherford backscattering spectra allowed determining the composition profiles of the samples. In both cases, a constant composition of the II-VI semiconductors throughout the porous layer down to the substrate was found.

Nanostructured porous silicon micropatterns as a tool for substrate-conditioned cell research.

The localized irradiation of Si allows a precise patterning at the microscale of nanostructured materials such as porous silicon (PS). PS patterns with precisely defined geometries can be fabricated using ion stopping masks. The nanoscale textured micropatterns were used to explore their influence as microenvironments for human mesenchymal stem cells (hMSCs).