Variability in HfO-based memristors described with a new bidimensional statistical technique.

A new statistical analysis is presented to assess cycle-to-cycle variability in resistive memories. This method employs two-dimensional (2D) distributions of parameters to analyse both set and reset voltages and currents, coupled with a 2D coefficient of variation (CV). This 2D methodology significantly enhances the analysis, providing a more thorough and comprehensive understanding of the data compared to conventional one-dimensional methods.

Thermal Compact Modeling and Resistive Switching Analysis in Titanium Oxide-Based Memristors.

Resistive switching devices based on the Au/Ti/TiO/Au stack were developed. In addition to standard electrical characterization by means of - curves, scanning thermal microscopy was employed to localize the hot spots on the top device surface (linked to conductive nanofilaments, CNFs) and perform in-operando tracking of temperature in such spots. In this way, electrical and thermal responses can be simultaneously recorded and related to each other.

3D simulation of conductive nanofilaments in multilayer h-BN memristors a circuit breaker approach.

A 3D simulation of conductive nanofilaments (CNFs) in multilayer hexagonal-BN memristors is performed. To do so, a simulation tool based on circuit breakers is developed including for the first time a 3D resistive network. The circuit breakers employed can be modeled with two, three and four resistance states; in addition, a series resistance and a module to account for quantum effects, by means of the quantum point contact model, are also included.

TiN/Ti/HfO/TiN memristive devices for neuromorphic computing: from synaptic plasticity to stochastic resonance.

We characterize TiN/Ti/HfO/TiN memristive devices for neuromorphic computing. We analyze different features that allow the devices to mimic biological synapses and present the models to reproduce analytically some of the data measured. In particular, we have measured the spike timing dependent plasticity behavior in our devices and later on we have modeled it.