Publications by authors named "A C Twitchett-Harrison"

After the publication of "Direct formation of hard-magnetic tetrataenite in bulk alloy castings" Ivanov et al., Advanced Science 10 (2022) 2204315, the authors identified a potential misinterpretation of the experimental data. Further work confirms that the original conclusions cannot be supported, and accordingly the paper is retracted.

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Skyrmion-based devices have been proposed as a promising solution for low-energy data storage. These devices include racetrack or logic structures and require skyrmions to be confined in regions with dimensions comparable to the size of a single skyrmion. Here we examine skyrmions in FeGe device shapes using Lorentz transmission electron microscopy to reveal the consequences of skyrmion confinement in a device-like structure.

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Magnetic skyrmions are topologically nontrivial particles with a potential application as information elements in future spintronic device architectures. While they are commonly portrayed as two dimensional objects, in reality magnetic skyrmions are thought to exist as elongated, tube-like objects extending through the thickness of the host material. The study of this skyrmion tube state (SkT) is vital for furthering the understanding of skyrmion formation and dynamics for future applications.

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The intense research effort investigating magnetic skyrmions and their applications for spintronics has yielded reports of more exotic objects including the biskyrmion, which consists of a bound pair of counter-rotating vortices of magnetization. Biskyrmions have been identified only from transmission electron microscopy images and have not been observed by other techniques, nor seen in simulations carried out under realistic conditions. Here, quantitative Lorentz transmission electron microscopy, X-ray holography, and micromagnetic simulations are combined to search for biskyrmions in MnNiGa, a material in which they have been reported.

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Pronounced improvements in the understanding of semiconductor device performance are expected if electrostatic potential distributions can be measured quantitatively and reliably under working conditions with sufficient sensitivity and spatial resolution. Here, we employ off-axis electron holography to characterize an electrically-biased Si p-n junction by measuring its electrostatic potential, electric field and charge density distributions under working conditions. A comparison between experimental electron holographic phase images and images obtained using three-dimensional electrostatic potential simulations highlights several remaining challenges to quantitative analysis.

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