Publications by authors named "A Belianinov"

Ion implantation is a key capability for the semiconductor industry. As devices shrink, novel materials enter the manufacturing line, and quantum technologies transition to being more mainstream. Traditional implantation methods fall short in terms of energy, ion species, and positional precision.

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Article Synopsis
  • Continuous advancements in electronic devices beyond traditional silicon require the integration of ferroelectric and semiconductor materials, particularly hafnium oxide (HfO).
  • Recent research shows that local helium (He) implantation can activate ferroelectric properties in HfO, although the mechanisms behind this process are still not fully understood.
  • The study explores various factors like molar volume changes and vacancy dynamics caused by He ion implantation, which provides insights into the origins of ferroelectricity and potential for developing new nanoengineered materials.
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Molybdenum sulfide emerged as promising hydrogen evolution reaction (HER) electrocatalyst thanks to its high intrinsic activity, however its limited active sites exposure and low conductivity hamper its performance. To address these drawbacks, the non-equilibrium nature of pulsed laser deposition (PLD) is exploited to synthesize self-supported hierarchical nanoarchitectures by gas phase nucleation and sequential attachment of defective molybdenum sulfide clusters. The physics of the process are studied by in situ diagnostics and correlated to the properties of the resulting electrocatalyst.

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We demonstrate a simple three-step gold thin-film sample preparation process to enhance the morphology and lithographic precision using helium ion based direct-writing. The procedure includes metal deposition, heat treatment and template stripping, which produce smooth monocrystalline gold grains with sizes up to 500 nm and an average surface roughness of 0.267 nm.

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The next generation optical, electronic, biological, and sensing devices as well as platforms will inevitably extend their architecture into the 3rd dimension to enhance functionality. In focused ion beam induced deposition (FIBID), a helium gas field ion source can be used with an organometallic precursor gas to fabricate nanoscale structures in 3D with high-precision and smaller critical dimensions than focused electron beam induced deposition (FEBID), traditional liquid metal source FIBID, or other additive manufacturing technology. In this work, we report the effect of beam current, dwell time, and pixel pitch on the resultant segment and angle growth for nanoscale 3D mesh objects.

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