Generation of a Charge Carrier Gradient in a 3C-SiC/Si Heterojunction with Asymmetric Configuration.

It is critical to investigate the charge carrier gradient generation in semiconductor junctions with an asymmetric configuration, which can open a new platform for developing lateral photovoltaic and self-powered devices. This paper reports the generation of a charge carrier gradient in a 3C-SiC/Si heterojunction with an asymmetric electrode configuration. 3C-SiC/Si heterojunction devices with different electrode widths were illuminated by laser beams (wavelengths of 405, 521, and 637 nm) and a halogen bulb.

Surface modification and improvements of wicking properties and dyeability of grey jute-cotton blended fabrics using low-pressure glow discharge air plasma.

Herein, we reported the improvements of wicking properties and dyeability of the jute-cotton blended (40:60) fabrics due to the effect of low-pressure glow discharge (LPGD) air plasma under selected exposure times. The microscopic features, functional groups, wettability, contact angles, wetting area, wicking rates, and reflectance values of the jute-cotton blended fabrics were analyzed using numerous experimental techniques. The scanning electron microscopy (SEM) and Fourier transform infrared spectroscopy (FTIR) techniques were used to investigate the morphological and compositional modifications of plasma-treated jute blended cotton fabrics.

Optothermotronic effect as an ultrasensitive thermal sensing technology for solid-state electronics.

The thermal excitation, regulation, and detection of charge carriers in solid-state electronics have attracted great attention toward high-performance sensing applications but still face major challenges. Manipulating thermal excitation and transport of charge carriers in nanoheterostructures, we report a giant temperature sensing effect in semiconductor nanofilms via optoelectronic coupling, termed optothermotronics. A gradient of charge carriers in the nanofilms under nonuniform light illumination is coupled with an electric tuning current to enhance the performance of the thermal sensing effect.

3C-SiC/Si Heterostructure: An Excellent Platform for Position-Sensitive Detectors Based on Photovoltaic Effect.

Single-crystalline silicon carbide (3C-SiC) on the Si substrate has drawn significant attention in recent years due to its low wafer cost and excellent mechanical, chemical, and optoelectronic properties. However, the applications of the structure have primarily been focused on piezoresistive and pressure sensors, bio-microelectromechanical system, and photonics. Herein, we report another promising application of the heterostructure as a laser spot position-sensitive detector (PSD) based on the lateral photovoltaic effect (LPE) under nonuniform optical illuminations at zero-bias conditions.

Giant piezoresistive effect by optoelectronic coupling in a heterojunction.

Enhancing the piezoresistive effect is crucial for improving the sensitivity of mechanical sensors. Herein, we report that the piezoresistive effect in a semiconductor heterojunction can be enormously enhanced via optoelectronic coupling. A lateral photovoltage, which is generated in the top material layer of a heterojunction under non-uniform illumination, can be coupled with an optimally tuned electric current to modulate the magnitude of the piezoresistive effect.