Peptide-conjugated antimiRs improve myotonic dystrophy type 1 phenotypes by promoting endogenous MBNL1 expression.

Myotonic dystrophy type 1 (DM1) is a rare neuromuscular disease caused by a CTG repeat expansion in the gene that generates toxic RNA with a myriad of downstream alterations in RNA metabolism. A key consequence is the sequestration of alternative splicing regulatory proteins MBNL1/2 by expanded transcripts in the affected tissues. MBNL1/2 depletion interferes with a developmental alternative splicing switch that causes the expression of fetal isoforms in adults.

Tailoring Optical Properties in Transparent Highly Conducting Perovskites by Cationic Substitution.

SrMoO , SrNbO , and SrVO are remarkable highly conducting d (V, Nb) or d (Mo) perovskite metals with an intrinsically high transparency in the visible. A key scientific question is how the optical properties of these materials can be manipulated to make them suitable for applications as transparent electrodes and in plasmonics. Here, it is shown how 3d/4d cationic substitution in perovskites tailors the relevant materials parameters, i.

Structural and Electrical Response of Emerging Memories Exposed to Heavy Ion Radiation.

Hafnium oxide- and GeSbTe-based functional layers are promising candidates in material systems for emerging memory technologies. They are also discussed as contenders for radiation-harsh environment applications. Testing the resilience against ion radiation is of high importance to identify materials that are feasible for future applications of emerging memory technologies like oxide-based, ferroelectric, and phase-change random-access memory.

Defect-Stabilized Substoichiometric Polymorphs of Hafnium Oxide with Semiconducting Properties.

Hafnium oxide plays an important role as a dielectric material in various thin-film electronic devices such as transistors and resistive or ferroelectric memory. The crystallographic and electronic structure of the hafnia layer often depends critically on its composition and defect structure. Here, we report two novel defect-stabilized polymorphs of substoichiometric HfO with semiconducting properties that are of particular interest for resistive switching digital or analog memory devices.

All-Oxide Varactor Electromechanical Properties Extracted by Highly Accurate Modeling Over a Broad Frequency and Electric Bias Range.

Since the dielectric permittivity of ferroelectric materials depends on the electric field, they allow designing switchable and continuously tunable devices for adaptive microwave front ends. Part of the ongoing research is the field of all-oxide devices, where epitaxial oxide conductors are used instead of polycrystalline metal electrodes, leading to epitaxial ferroelectric layers and resulting in high device performance. In particular, they allow engineering the acoustic properties separated from the electric ones due to the structural similarity between the dielectric and conducting oxide films.