Observation of Λ_{c}^{+}→Λa_{0}(980)^{+} and Evidence for Σ(1380)^{+} in Λ_{c}^{+}→Λπ^{+}η.

Based on 6.1  fb^{-1} of e^{+}e^{-} annihilation data collected at center-of-mass energies from 4.600 to 4.

Test of Lepton Universality and Measurement of the Form Factors of D^{0}→K^{*}(892)^{-}μ^{+}ν_{μ}.

One of the main goals of studying semileptonic decays in flavor physics is to gain a better understanding of hadronic transitions in the nonperturbative region of Quantum Chromodynamics. This involves measuring Cabibbo-Kobayashi-Maskawa matrix elements, understanding form factors, and comparing them with theoretical predictions. We report a first study of the semileptonic decay D^{0}→K^{-}π^{0}μ^{+}ν_{μ} by analyzing an e^{+}e^{-} annihilation data sample of 7.

Study of D_{s}^{+}→f_{0}(980)ρ^{+} and ϕπ^{+} Decays through D_{s}^{+}→π^{+}π^{+}π^{-}π^{0}.

We perform the first amplitude analysis of D_{s}^{+}→π^{+}π^{+}π^{-}π^{0} decays based on data samples of electron-positron collisions recorded with the BESIII detector at center-of-mass energies between 4.128 and 4.226 GeV, corresponding to an integrated luminosity of 7.

Precise Measurement of the e^{+}e^{-}→D_{s}^{+}D_{s}^{-} Cross Section at Center-of-Mass Energies from Threshold to 4.95 GeV.

Using the e^{+}e^{-} collision data collected with the BESIII detector operating at the BEPCII collider, at center-of-mass energies from the threshold to 4.95 GeV, we present precise measurements of the cross section for the process e^{+}e^{-}→D_{s}^{+}D_{s}^{-} using a single-tag method. The resulting cross section line shape exhibits several new structures, thereby offering an input for a future coupled-channel analysis and model tests, which are critical to understand vector charmonium-like states with masses between 4 and 5 GeV.

Low Temperature Atomic Layer Deposition of (00l)-Oriented Elemental Bismuth.

This study presents the first successful demonstration of growing elemental bismuth (Bi) thin films via thermal atomic layer deposition (ALD) using Bi(NMe) as the precursor and Sb(SiMe) as the co-reactant. The films were deposited at a relatively low temperature of 100 °C, with a growth per cycle (GPC) of 0.31-0.