Ultra-compact diode-pumped single-frequency Ti:sapphire laser.

In this Letter, we report on the development of an ultra-compact single-frequency Ti:sapphire laser under direct diode pumping. Single-longitudinal-mode operation is realized from a miniature plane-parallel resonator using a volume Bragg grating as an output coupler. InGaN laser diodes operating at around 470 nm and 490 nm with a combined power of 6.

Broadly tunable femtosecond pulses around 2.06 µm from a diode-pumped Tm-doped solid-state laser source.

We report on a broadly tunable diode-pumped femtosecond Tm:LuScO laser source around 2.06 µm. Tuning was obtained through the use of a steeply diving birefringent filter, maintaining sub-600 fs pulses over a tuning range of 2019-2110 nm.

Ultrafast diode-pumped Ti:sapphire laser with broad tunability.

We report a broadly wavelength-tunable femtosecond diode-pumped Ti:sapphire laser, passively mode-locked using both semiconductor saturable absorber mirror (SESAM) and Kerr-lens mode-locking (KLM) techniques. Using two pump laser diodes (operating at 450 nm), an average output power as high as 433 mW is generated during mode-locking with the SESAM. A tunability range of 37 nm (788-825 nm) was achieved with the shortest pulse duration of 62 fs at 812 nm.

Diode-pumped femtosecond Tm-doped LuScO laser near 2.1 μm.

We report on the first demonstration, to the best of our knowledge, of a diode-pumped Tm:LuScO laser. Efficient and broadly tunable continuous wave operation in the 1973-2141 nm region and femtosecond mode-locking through the use of an ion-implanted InGaAsSb quantum-well-based semiconductor saturable absorber mirror are realized. When mode-locked, near-transform-limited pulses as short as 170 fs were generated at 2093 nm with an average output power of 113 mW and a pulse repetition frequency of 115.

1.9 µm waveguide laser fabricated by ultrafast laser inscription in Tm:LuO ceramic.

The ultrafast laser inscription technique has been used to fabricate channel waveguides in Tm-doped LuO ceramic gain medium for the first time to our knowledge. Laser operation has been demonstrated using a monolithic microchip cavity with a continuous-wave Ti:sapphire pump source at 796 nm. The maximum output power achieved from the Tm:LuO waveguide laser was 81 mW at 1942 nm.