Thin active region HgCdTe-based quantum cascade laser with quasi-relativistic dispersion law.

HgCdTe is promising as a material to solve a problem of the development of semiconductor sources with an operational frequency range of 6-10 THz due to the small optical phonon energies and electron effective mass. In this study, we calculate the dependence of the metal-metal waveguide characteristics on the number of cascades for the 3-well design HgCdTe-based quantum cascade laser at 8.3 THz.

HgCdTe-based quantum cascade lasers operating in the GaAs phonon Reststrahlen band predicted by the balance equation method.

The lack of radiation sources in the frequency range of 7-10 THz is associated with strong absorption of the THz waves on optical phonons within the GaAs Reststrahlen band. To avoid such absorption, we propose to use HgCdTe as an alternative material for THz quantum cascade lasers thanks to a lower phonon energy than in III-V semiconductors. In this work, HgCdTe-based quantum cascade lasers operating in the GaAs phonon Reststrahlen band with a target frequency of 8.