Ultrafast vibrational dynamics and stability of deuterated amorphous silicon.

Infrared four-wave mixing experiments performed upon deuterated amorphous silicon layers (a-Si:D) reveal profound differences in the dynamics of Si-D stretch vibrations compared to those of analogous Si-H vibrational modes in hydrogenated amorphous silicon (a-Si:H). Remarkably, transient-grating measurements of the population decay rate of the Si-D vibrations show single-exponential decay directly into collective modes of the a-Si host, bypassing the local bending modes of the defect into which the Si-H vibrations decay. Photon-echo measurements of the vibrational dephasing suggest at low temperature contributions from TO nonequilibrium phonons and at elevated temperatures elastic phonon scattering of TA phonons.

Dynamics of Si-H vibrations in an amorphous environment.

We present results of the first vibrational photon-echo, transient-grating, and temperature dependent transient-bleaching experiments on a-Si:H. Using these techniques, and the infrared light of a free electron laser, the vibrational population decay and phase relaxation of the Si-H stretching mode were investigated. Careful analysis of the data indicates that the vibrational energy relaxes directly into Si-H bending modes and Si phonons, with a distribution of rates determined by the amorphous host.