Proximity-Induced Exchange Interaction and Prolonged Valley Lifetime in MoSe/CrSBr Van-Der-Waals Heterostructure with Orthogonal Spin Textures.

Heterostructures, composed of semiconducting transition-metal dichalcogenides (TMDC) and magnetic van-der-Waals materials, offer exciting prospects for the manipulation of the TMDC valley properties via proximity interaction with the magnetic material. We show that the atomic proximity of monolayer MoSe and the antiferromagnetic van-der-Waals crystal CrSBr leads to an unexpected breaking of time-reversal symmetry, with originally perpendicular spin directions in both materials. The observed effect can be traced back to a proximity-induced exchange interaction via first-principles calculations.

Ultrathin natural biotite crystals as a dielectric layer for van der Waals heterostructure applications.

Biotite, an iron-rich mineral belonging to the trioctahedral mica group, is a naturally abundant layered material (LM) exhibiting attractive electronic properties for application in nanodevices. Biotite stands out as a non-degradable LM under ambient conditions, featuring high-quality basal cleavage-a significant advantage for van der Waals heterostructure (vdWH) applications. In this work, we present the micro-mechanical exfoliation of biotite down to monolayers (1Ls), yielding ultrathin flakes with large areas and atomically flat surfaces.

Revealing the impact of strain in the optical properties of bubbles in monolayer MoSe.

Strain plays an important role for the optical properties of monolayer transition metal dichalcogenides (TMDCs). Here, we investigate strain effects in a monolayer MoSe sample with a large bubble region using μ-Raman, second harmonic generation (SHG), μ-photoluminescence and magneto μ-photoluminescence at low temperature. Remarkably, our results reveal the presence of a non-uniform strain field and the observation of emission peaks at lower energies which are the signatures of exciton and trion quasiparticles red-shifted by strain effects in the bubble region, in agreement with our theoretical predictions.

Cathodoluminescence mapping of electron concentration in MBE-grown GaAs:Te nanowires.

Cathodoluminescence mapping is used as a contactless method to probe the electron concentration gradient of Te-doped GaAs nanowires. The room temperature and low temperature (10 K) cathodoluminescence analysis method previously developed for GaAs:Si is first validated on five GaAs:Te thin film samples, before extending it to the two GaAs:Te NW samples. We evidence an electron concentration gradient ranging from below 1 × 10cmto 3.

Electrical and optical properties of transition metal dichalcogenides on talc dielectrics.

Advanced van der Waals (vdW) heterostructure devices rely on the incorporation of high quality dielectric materials which need to possess a low defect density as well as being atomically smooth and uniform. In this work we explore the use of talc dielectrics as a potentially clean alternative substrate to hexagonal boron nitride (hBN) for few-layer transition metal dichalcogenide (TMDC) transistors and excitonic TMDC monolayers. We find that talc dielectric transistors show small hysteresis which does not depend strongly on sweep rate and show negligible leakage current for our studied dielectric thicknesses.

The role of As species in self-catalyzed growth of GaAs and GaAsSb nanowires.

Precise control and broad tunability of the growth parameters are essential in engineering the optical and electrical properties of semiconductor nanowires (NWs) to make them suitable for practical applications. To this end, we report the effect of As species, namely As and As, on the growth of self-catalyzed GaAs based NWs. The role of As species is further studied in the presence of Te as n-type dopant in GaAs NWs and Sb as an additional group V element to form GaAsSb NWs.

Optimization of Ohmic Contacts to p-GaAs Nanowires.

The performance of Ohmic contacts applied to semiconductor nanowires (NWs) is an important aspect for enabling their use in electronic or optoelectronic devices. Due to the small dimensions and specific surface orientation of NWs, the standard processing technology widely developed for planar heterostructures cannot be directly applied. Here, we report on the fabrication and optimization of Pt/Ti/Pt/Au Ohmic contacts for p-type GaAs nanowires grown by molecular beam epitaxy.

Gradients of Be-dopant concentration in self-catalyzed GaAs nanowires.

Effective and controllable doping is instrumental for enabling the use of III-V semiconductor nanowires (NWs) in practical electronics and optoelectronics applications. To this end, dopants are incorporated during self-catalyzed growth via vapor-liquid-solid mechanism through the catalyst droplet or by vapor-solid mechanism of the sidewall growth. The interplay of these mechanisms together with the competition between axial elongation and radial growth of NWs can result in dopant concentration gradients along the NW axis.

Revealing the nature of low-temperature photoluminescence peaks by laser treatment in van der Waals epitaxially grown WS monolayers.

Monolayers of transition metal dichalcogenides (TMD) are promising materials for optoelectronics devices. However, one of the challenges is to fabricate large-scale growth of high quality TMD monolayers with the desired properties in order to expand their use in potential applications. Here, we demonstrate large-scale tungsten disulfide (WS) monolayers grown by van der Waals Epitaxy (VdWE).

Visible to infrared low temperature luminescence of Er(3+), Nd(3+) and Sm(3+) in CaSnO3 phosphors.

Novel stannate phosphor, orthorhombic CaSnO3 phosphors doped with Er(3+), Nd(3+) and Sm(3+) have been synthesized by a conventional solid-state method under N2+H2 gas flow. Visible and near-infrared photoluminescence (PL) properties were investigated as function of laser power and temperature. It was observed that all dopant ions are well incorporated in CaSnO3 and are responsible for the optical emission in the temperature range of 10-300K.